Light extraction improvement of GaN-based light-emitting diodes using patterned undoped GaN bottom reflection gratings

Simeon Trieu; Xiaomin Jin; Bei Zhang; Tao Dai; Kui Bao; Xiang-Ning Kang; Guo-Yi Zhang

doi:10.1117/12.805480

19 February 2009 Light extraction improvement of GaN-based light-emitting diodes using patterned undoped GaN bottom reflection gratings

Simeon Trieu, Xiaomin Jin, Bei Zhang, Tao Dai, Kui Bao, Xiang-Ning Kang, Guo-Yi Zhang

Author Affiliations +

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 72162Q (2009) https://doi.org/10.1117/12.805480
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

The Gallium Nitride (GaN) Light-Emitting-Diode (LED) bottom refection grating simulation and results are presented. A microstructure GaN bottom grating, either conical holes or cylindrical holes, was calculated and compared with the non-grating (flat) case. A time monitor was also placed just above the top of the LED to measure both time and power output from the top of the LED. Many different scenarios were simulated by sweeping three parameters that affected the structure of the micro-structure grating: unit cell period (Α) from 1 to 6 microns, unit cell width (w) from 1 to 6 microns, and unit cell grating height (d) from 50 to 200nm. The simulation results show that the cylindrical grating case has a 98% light extraction improvement, and the conical grating case has a 109% light extraction improvement compared to the flat plate case.

Citation Download Citation

Simeon Trieu, Xiaomin Jin, Bei Zhang, Tao Dai, Kui Bao, Xiang-Ning Kang, and Guo-Yi Zhang "Light extraction improvement of GaN-based light-emitting diodes using patterned undoped GaN bottom reflection gratings", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162Q (19 February 2009); https://doi.org/10.1117/12.805480

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