High-Speed Photoconductive Detectors Fabricated In Heteroepitaxial GaAs Layers

G. W. Turner; V. Diadiuk; H. Q. Le; H. K. Choi; G. M. Metze; B-Y. Tsaur

doi:10.1117/12.937667

14 January 1987 High-Speed Photoconductive Detectors Fabricated In Heteroepitaxial GaAs Layers

G. W. Turner, V. Diadiuk, H. Q. Le, H. K. Choi, G. M. Metze, B-Y. Tsaur

Proceedings Volume 0722, Components for Fiber Optic Applications; (1987) https://doi.org/10.1117/12.937667
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

Response times of ~60 and 25 ps (FWHM), respectively, have been measured for photoconductive detectors fabricated in GaAs layers grown by molecular beam epitaxy on silicon substrates and silicon-on-sapphire substrates. Photoconductive detectors, which can be readily combined with GaAs logic devices such as MESFETs to provide high-speed optical to electrical conversion, could be used in optical interconnects that are integrated with Si circuits on monolithic GaAs/Si wafers. Transconductance values of 120 mS/mm have been obtained for MESFET's fabricated in GaAs layers grown on silicon-on-sapphire substrates.

Citation Download Citation

G. W. Turner, V. Diadiuk, H. Q. Le, H. K. Choi, G. M. Metze, and B-Y. Tsaur "High-Speed Photoconductive Detectors Fabricated In Heteroepitaxial GaAs Layers", Proc. SPIE 0722, Components for Fiber Optic Applications, (14 January 1987); https://doi.org/10.1117/12.937667

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