Rapid and minimally invasive quantum cascade wafer testing

Ekua N. Bentil; Fatima Toor; Anthony J. Hoffman; Matthew D. Escarra; Claire F. Gmachl

doi:10.1117/12.810258

3 February 2009 Rapid and minimally invasive quantum cascade wafer testing

Ekua N. Bentil, Fatima Toor, Anthony J. Hoffman, Matthew D. Escarra, Claire F. Gmachl

Proceedings Volume 7230, Novel In-Plane Semiconductor Lasers VIII; 72300T (2009) https://doi.org/10.1117/12.810258
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Quantum Cascade (QC) wafer quality testing requires intensive processing and characterization. Here, we demonstrate a minimally invasive technique that gives rapid feedback on wafer quality. A mesa is fabricated using only a single etch and metallization step. The device is electrically pumped and optically and electrically characterized. The peak wavelength position and the full width at half maximum (FWHM) as a function of applied electric field, turn-on voltage, maximum operating current density and threshold current density of the mesas are measured. Results of the mesa and lasers processed from the same wafer are compared and differed by less than 10 %.

Citation Download Citation

Ekua N. Bentil, Fatima Toor, Anthony J. Hoffman, Matthew D. Escarra, and Claire F. Gmachl "Rapid and minimally invasive quantum cascade wafer testing", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300T (3 February 2009); https://doi.org/10.1117/12.810258

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