Paper
30 December 2008 Dielectric performance of diamond-like carbon nanofilms deposited by electron-beam-induced deposition
Eugeniu Balaur, Andrew G. Peele
Author Affiliations +
Proceedings Volume 7269, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems IV; 72690K (2008) https://doi.org/10.1117/12.810690
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2008, Melbourne, Australia
Abstract
The effect of electron beam dose and low accelerating voltage on diamond-like-carbon (DLC) deposition rate and the resulting current-voltage characteristics in thin metal/DLC/semiconductor junctions was studied. We show that thicker DLC films can be obtained using lower accelerating voltages (2 kV) than when using higher accelerating voltage (20 kV). However, under the conditions used the insulating performance of the thicker films is worse than the thinner films. We attribute this effect to the variation of tunnelling barrier height in DLC deposited using different accelerating voltages. DLC films with a tunnelling barrier height of up to 3.12 eV were obtained using a 20 kV electron-beam, while only 0.73 eV was achieved for 2 kV DLC films.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eugeniu Balaur and Andrew G. Peele "Dielectric performance of diamond-like carbon nanofilms deposited by electron-beam-induced deposition", Proc. SPIE 7269, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems IV, 72690K (30 December 2008); https://doi.org/10.1117/12.810690
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KEYWORDS
Dielectrics

Data modeling

Carbon

Thin films

Oxides

Semiconductors

Electron beams

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