Paper
1 April 2009 Post-develop blob defect reduction
Masahiko Harumoto, Sei Negoro, Akihiro Hisai, Michio Tanaka, Glen Mori, Mark Slezak
Author Affiliations +
Abstract
This study reports on blob defect reduction and process impacts by Acid Rinse System. Blob defects that appear after develop are a common problem with i-line, KrF, ArF and ArF-immersion resists. Last year we reported Blob defects were influenced by the develop process and were able to be decreased by improving process. Furthermore we identified blob defects were caused from alkaline developer and could be reduced by neutralizing Acid Rinse. In this work, we designed a novel develop process and system that reduced blob defects. We evaluated this system on the non-topcoat immersion resist. The blob defects on immersion resist were also eliminated by this system but affected by each resist surface condition. We also evaluated the impacts from Acid rinse for some kinds of patterns and resists, because we needed to indentify whether there were negatively process impacts. We reports that Acid Rinse System significantly reduced blob defect counts, and whether influenced other process impacts. Finally we report the mechanism of the blob defects reduction.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiko Harumoto, Sei Negoro, Akihiro Hisai, Michio Tanaka, Glen Mori, and Mark Slezak "Post-develop blob defect reduction", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730P (1 April 2009); https://doi.org/10.1117/12.813605
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Scanning electron microscopy

Raman spectroscopy

Carbon dioxide

Bridges

Photoresist processing

Image processing

Back to Top