Paper
6 May 2009 High-power semiconductor lasers at eye-safe wavelengths
Mark L. Osowski, Yossi Gewirtz, Robert M. Lammert, Se W. Oh, Chameli Panja, Victor C. Elarde, Laurent Vaissie, Falgun D. Patel, Jeffrey E. Ungar
Author Affiliations +
Abstract
InP based diode lasers are required to realize the next generation of eyesafe applications, including direct rangefinding and HEL weapons systems. We report on the progress of high power eyesafe single spatial and longitudinal mode 1550nm MOPA devices, where we have achieved peak powers in excess of 10W with 50ns pulse widths. A conceptual model based on our recent MOPA results show the path towards scaling to high powers based on spatial beam combination with operating conditions suitable for direct rangefinding applications. We also report on the progress towards high power 14xx and 15xx nm pump lasers for eyesafe HEL systems.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark L. Osowski, Yossi Gewirtz, Robert M. Lammert, Se W. Oh, Chameli Panja, Victor C. Elarde, Laurent Vaissie, Falgun D. Patel, and Jeffrey E. Ungar "High-power semiconductor lasers at eye-safe wavelengths", Proc. SPIE 7325, Laser Technology for Defense and Security V, 73250V (6 May 2009); https://doi.org/10.1117/12.818067
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CITATIONS
Cited by 6 scholarly publications and 1 patent.
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KEYWORDS
Semiconductor lasers

High power lasers

Diodes

Collimation

Fabry–Perot interferometers

Fiber lasers

Laser applications

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