Raman scattering of In[sub]0.82[/sub]Ga[sub]0.18[/sub]As grown by two step technique

Tie-min Zhang; Guo-qing Miao; Jun Fu; Hong Lin; Fu-heng Zhang; Hang Song

doi:10.1117/12.834556

24 August 2009 Raman scattering of In_0.82Ga_0.18As grown by two step technique

Tie-min Zhang, Guo-qing Miao, Jun Fu, Hong Lin, Fu-heng Zhang, Hang Song

Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73810E (2009) https://doi.org/10.1117/12.834556
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

In_0.82Ga_0.18As was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) on InP substrates with two-step growth technique. Three groups sample with different buffer growth conditions were analyzed by Raman scattering. The intensity of GaAs-like LO phonon of Raman scattering, the frequency shift of the GaAs-like LO phonon and asymmetry ratio [symbol] of GaAs-like LO phonon of samples were characterized the optical property of In_0.82Ga_0.18As epilayer, respectively. The results of experiments showed that the optimum buffer In content was 0.82, the optimum buffer thickness was about 100 nm, and the optimum buffer growth temperature was about 450 °C.

Citation Download Citation

Tie-min Zhang, Guo-qing Miao, Jun Fu, Hong Lin, Fu-heng Zhang, and Hang Song "Raman scattering of In_0.82Ga_0.18As grown by two step technique", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73810E (24 August 2009); https://doi.org/10.1117/12.834556

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