The effect of Mg and Si impurities on the optical property of InGaN-light emitting diode

Eun-Hyun Park; Jin Jang

doi:10.1117/12.829445

18 August 2009 The effect of Mg and Si impurities on the optical property of InGaN-light emitting diode

Eun-Hyun Park, Jin Jang

Proceedings Volume 7422, Ninth International Conference on Solid State Lighting; 742203 (2009) https://doi.org/10.1117/12.829445
Event: SPIE Optical Engineering + Applications, 2009, San Diego, California, United States

Abstract

Although Si and Mg impurities are essential elements for n and p type GaN, unintentional incorporation into InGaN-multiple quantum wells (MQWs) seriously affects the optical property of LEDs. Si doping in MQWs obstructs the hole carrier transport and induces the dead quantum wells (QWs) of MQWs. Also, Mg impurity diffusion from p- GaN into MQWs degrades the radiative recombination rate of the QWs placed near Mg doped p-GaN layer. In this paper, the effects of Si and Mg impurities on the optical property were systematically investigated.

Citation Download Citation

Eun-Hyun Park and Jin Jang "The effect of Mg and Si impurities on the optical property of InGaN-light emitting diode", Proc. SPIE 7422, Ninth International Conference on Solid State Lighting, 742203 (18 August 2009); https://doi.org/10.1117/12.829445

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