CMP process comparison for 150mm larger area InSb (111)B focal plane array substrates

P. Flint; L. P. Allen; G. Dallas; B. D. Ruchert; D. Bakken; K. Blanchat; S. R. Vangala; W. D. Goodhue; D. Bliss; H. Dauplais

doi:10.1117/12.830114

24 September 2009 CMP process comparison for 150mm larger area InSb (111)B focal plane array substrates

P. Flint, L. P. Allen, G. Dallas, B. D. Ruchert, D. Bakken, K. Blanchat, S. R. Vangala, W. D. Goodhue, D. Bliss, H. Dauplais

Author Affiliations +

Proceedings Volume 7487, Optical Materials in Defence Systems Technology VI; 74870C (2009) https://doi.org/10.1117/12.830114
Event: SPIE Security + Defence, 2009, Berlin, Germany

Abstract

As size requirements and pixel viabilities for mid-wavelength infrared (MWIR) focal plane arrays (FPAs) continue to increase, larger InSb substrate diameters are of significant interest. To improve resolution and sensitivity requirements for high performance infrared focal plane array (IRFPA) imaging systems in the 1-5.4 μm region (77°K), the surface of new larger diameter (150mm) InSb substrates must meet or surpass stringent demands. The scale-up to 150mm InSb has necessitated changes in processing and finishing parameters, as device layer growth by epitaxy or other means often requires a surface roughness average (R_a)~0.1 nm. This study compares two different CMP finishes for new 150mm diameter InSb wafers and examines their suitability for IRFPA applications. InSb surface quality was examined by molecular beam epitaxy (MBE), reflective high energy electron diffraction (RHEED), atomic force microscopy (AFM), thermal X-ray spectroscopy (TXPS), and multiple crystal x-ray diffraction (XRD) for two distinct CMP finishes on InSb(111)B substrates from the same crystal boule. This study has shown that differences result in thermal desorption properties with the CMP process, consistent with differences in surface smoothness and oxide composition. Better surface composition and crystallinity were produced with a modified CMP process for the 150mm diameter crystals. We conclude that the differential ratio between the pH, the oxidizer percentage, and the buffering percentage of the modified CMP process is a benefit to larger diameter InSb IRFPA applications.

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P. Flint, L. P. Allen, G. Dallas, B. D. Ruchert, D. Bakken, K. Blanchat, S. R. Vangala, W. D. Goodhue, D. Bliss, and H. Dauplais "CMP process comparison for 150mm larger area InSb (111)B focal plane array substrates", Proc. SPIE 7487, Optical Materials in Defence Systems Technology VI, 74870C (24 September 2009); https://doi.org/10.1117/12.830114

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