Paper
12 October 2009 Theoretical study on optimization of high efficiency GaInP/GaInAs/Ge tandem solar cells
Gui Jiang Lin, Sheng Rong Huang, Jyh Chiarng Wu, Mei Chun Huang
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Abstract
This paper investigates which dopping concentration or layer thickness should be used to design practical GaInP/GaInAs/Ge triple-junction cells in order to optimize their performance. A rigorous model includes optical and electrical modules is developed to simulate the external quantumn efficiency, photocurrent and photovoltage of the GaInP/GaInAs/Ge tandem solar cells. It is found that cell efficiency strongly dependend on the top cell thickness and doping concentration at base and emitter layers. Proper structures of the tandem cell operating under AM0 ("air mass zero") illumination are suggested to obtain high efficiency.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gui Jiang Lin, Sheng Rong Huang, Jyh Chiarng Wu, and Mei Chun Huang "Theoretical study on optimization of high efficiency GaInP/GaInAs/Ge tandem solar cells", Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 75181E (12 October 2009); https://doi.org/10.1117/12.837568
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KEYWORDS
Doping

Tandem solar cells

Germanium

Indium gallium phosphide

External quantum efficiency

Solar cells

Absorption

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