Paper
15 May 2010 Rigorous EMF simulation of absorber shape variations and their impact on lithographic processes
Author Affiliations +
Proceedings Volume 7545, 26th European Mask and Lithography Conference; 75450C (2010) https://doi.org/10.1117/12.863595
Event: 26th European Mask and Lithography Conference, 2010, Grenoble, France
Abstract
We present a finite integration technique (FIT) simulator for modelling light diffraction from lithographic masks with complex shapes. This method has high flexibility in geometrical modelling and treating curved boundaries. The inherent feature of FIT allows more accurate rigorous electromagnetic field simulation in complex structures. This technique is also suited for fast EMF simulations and large 3D problems because of its parallelisation potential. We applied this method to investigate the effect of various mask shapes on lithographically printed images. The imaging results were obtained using Dr.LiTHO's imaging simulator. We demonstrate results for attenuated phase-shift mask (PSM) with different absorber deviations from ideal shapes such as footing and oblique sidewalls.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. Rahimi, A. Erdmann, P. Evanschitzky, and C. Pflaum "Rigorous EMF simulation of absorber shape variations and their impact on lithographic processes", Proc. SPIE 7545, 26th European Mask and Lithography Conference, 75450C (15 May 2010); https://doi.org/10.1117/12.863595
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Cited by 2 scholarly publications.
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KEYWORDS
Photomasks

Diffraction

Computer simulations

Finite-difference time-domain method

Lithography

Near field

Interfaces

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