High temperature and high peak-power 808nm QCW bars and stacks

G. Bacchin; A. Fily; B. Qiu; D. Fraser; S. Robertson; V. Loyo-Maldonado; S. D. McDougall; B. Schmidt

doi:10.1117/12.843735

17 February 2010 High temperature and high peak-power 808nm QCW bars and stacks

G. Bacchin, A. Fily, B. Qiu, D. Fraser, S. Robertson, V. Loyo-Maldonado, S. D. McDougall, B. Schmidt

Proceedings Volume 7583, High-Power Diode Laser Technology and Applications VIII; 75830P (2010) https://doi.org/10.1117/12.843735
Event: SPIE LASE, 2010, San Francisco, California, United States

Abstract

808 nm QCW bars were fabricated and mounted with hard solder technology onto H-mounts and G-stacks. At room temperature, reliable operation has been demonstrated at 400W at 400A per single 1-cm bar and for a G-stack at 3kW at around 300A. High temperature reliable operation has been demonstrated for both devices up to 95°C. Both types of devices were tested at various pulse widths and duty cycles. Both optical power and wavelength dependencies on the various conditions have been studied.

Citation Download Citation

G. Bacchin, A. Fily, B. Qiu, D. Fraser, S. Robertson, V. Loyo-Maldonado, S. D. McDougall, and B. Schmidt "High temperature and high peak-power 808nm QCW bars and stacks", Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 75830P (17 February 2010); https://doi.org/10.1117/12.843735

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