Intersubband device applications of nitride quantum structures

Roberto Paiella; Kristina Driscoll; Yan Li; Yitao Liao; Anirban Bhattacharyya; Christos Thomidis; Lin Zhou; David J. Smith; Enrico Bellotti; Theodore D. Moustakas

doi:10.1117/12.836260

22 January 2010 Intersubband device applications of nitride quantum structures

Roberto Paiella, Kristina Driscoll, Yan Li, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David J. Smith, Enrico Bellotti, Theodore D. Moustakas

Author Affiliations +

Proceedings Volume 7608, Quantum Sensing and Nanophotonic Devices VII; 76080N (2010) https://doi.org/10.1117/12.836260
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Nitride semiconductor quantum structures feature some unique properties for intersubband device development, including a record large conduction-band offset that allows extending the operating wavelength to the near-infrared spectral region, and large optical phonon energies that are advantageous for the development of THz devices. In this paper we review our recent work aimed at the demonstration of novel intersubband device functionalities using these materials. In particular, we have developed ultrafast all-optical switching devices operating at fiber-optic communication wavelengths, based on intersubband cross-absorption saturation in GaN/AlN quantum-well waveguides. Strong self-phase modulation of ultrafast optical pulses has also been measured in these waveguides, revealing a large intersubband refractive-index nonlinearity which is also promising for all-optical switching applications. Furthermore, we have demonstrated optically pumped intersubband light emission from GaN/AlN quantum wells at the record short wavelength of about 2 μm. Finally, we have used a rigorous Monte Carlo model to show that GaN/AlGaN quantum wells are promising for the development of THz quantum cascade lasers capable in principle of operation without cryogenic cooling.

Citation Download Citation

Roberto Paiella, Kristina Driscoll, Yan Li, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David J. Smith, Enrico Bellotti, and Theodore D. Moustakas "Intersubband device applications of nitride quantum structures", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76080N (22 January 2010); https://doi.org/10.1117/12.836260

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available