Improved performance of GaAsSb/GaAs SQW lasers

N. Hossain; S. R. Jin; S. J. Sweeney; S.-Q. Yu; S. R. Johnson; D. Ding; Y.-H. Zhang

doi:10.1117/12.842253

12 February 2010 Improved performance of GaAsSb/GaAs SQW lasers

N. Hossain, S. R. Jin, S. J. Sweeney, S.-Q. Yu, S. R. Johnson, D. Ding, Y.-H. Zhang

Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 761608 (2010) https://doi.org/10.1117/12.842253
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers. At room temperature, the devices show a low threshold current density (J_th) of 253 Acm^-2, a transparent current density of 98 Acm^-2, an internal quantum efficiency of 71%, an optical loss of 18 cm^-1 and a characteristic temperature (T₀) = 51K. The defect related recombination in these devices is negligible and the primary non-radiative current path has a stronger dependence on the carrier density than the radiative current contributing to ~84% of the threshold current at RT. From high hydrostatic pressure dependent measurements, a slight decrease followed by the strong increase in threshold current with pressure is observed, suggesting that the device performance is limited to both Auger recombination and carrier leakage.

Citation Download Citation

N. Hossain, S. R. Jin, S. J. Sweeney, S.-Q. Yu, S. R. Johnson, D. Ding, and Y.-H. Zhang "Improved performance of GaAsSb/GaAs SQW lasers", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 761608 (12 February 2010); https://doi.org/10.1117/12.842253

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