Paper
12 February 2010 A platform for GaAs opto-electronic integrated circuits based on GaAs/AlGaAs regrowth upon patterned InGaP
Kristian M. Groom, Benjamin J. Stevens, Punima D. L. Greenwood, David T. D. Childs, John S. Roberts, Matthew Lomas, Maxime Hugues, Hifsa Shahid, Richard Hogg
Author Affiliations +
Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 76160A (2010) https://doi.org/10.1117/12.841612
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
We demonstrate how GaAs/AlGaAs regrowth upon patterned InGaP can be utilised to realise self-aligned lasers, window structured superluminescent diodes and distributed feedback lasers. Such realisation demonstrates the promise of this methodology for GaAs-based opto-electronic integrated circuits through new capability for buried waveguides, low reflectivity facets and gratings structures.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kristian M. Groom, Benjamin J. Stevens, Punima D. L. Greenwood, David T. D. Childs, John S. Roberts, Matthew Lomas, Maxime Hugues, Hifsa Shahid, and Richard Hogg "A platform for GaAs opto-electronic integrated circuits based on GaAs/AlGaAs regrowth upon patterned InGaP", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76160A (12 February 2010); https://doi.org/10.1117/12.841612
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KEYWORDS
Gallium arsenide

Indium gallium phosphide

Reflectivity

Waveguides

Cladding

Photonic integrated circuits

Semiconductor lasers

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