Surface roughness of gallium nitride with volcano-like protrusions formed by KrF excimer laser etching

Shui-Jinn Wang; Wei-Chi Lee; Kai-Ming Uang; Tron-Min Chen; Der-Ming Kuo; Pei-Ren Wang; Po-Hong Wang

doi:10.1117/12.841636

11 February 2010 Surface roughness of gallium nitride with volcano-like protrusions formed by KrF excimer laser etching

Shui-Jinn Wang, Wei-Chi Lee, Kai-Ming Uang, Tron-Min Chen, Der-Ming Kuo, Pei-Ren Wang, Po-Hong Wang

Proceedings Volume 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV; 76170P (2010) https://doi.org/10.1117/12.841636
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Use of deep ultraviolet (248 nm) KrF laser irradiation to roughen vertical GaN-based LEDs surface with volcanolike protrusions for light output (Lop) improvement was proposed and demonstrated. After pulse irradiations of KrF laser (750-850 mJ/cm²), the rate of electron-hole pair recombination at sites with dislocation defects is greater than for crystalline GaN, favoring for the formation of GaO_x, and in turn, resulting in a relatively lower etching rate therein and leading to a roughened surface with volcano-like protrusions. Typical diameter/height and density of protrusions are around 2~4 μm/2 μm and 10⁶ cm^-2. Through the use of KrF laser and KOH etching, an enhancement in the root-meansquare surface roughness by 250 times and an improvement in Lop by 25% at 750 mA were obtained. It is expected that the surface roughness of Gallium Nitride by KrF excimer laser technology would be a potential candidate for the fabrication of high power GaN-based LEDs for solid-state lighting in the near future.

Citation Download Citation

Shui-Jinn Wang, Wei-Chi Lee, Kai-Ming Uang, Tron-Min Chen, Der-Ming Kuo, Pei-Ren Wang, and Po-Hong Wang "Surface roughness of gallium nitride with volcano-like protrusions formed by KrF excimer laser etching", Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76170P (11 February 2010); https://doi.org/10.1117/12.841636

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available