Paper
29 March 2010 Photobase generator and photo decomposable quencher for high-resolution photoresist applications
C. W. Wang, C. Y. Chang, Y. Ku
Author Affiliations +
Abstract
As the critical pitch continues to shrink for advanced technology nodes and the EUV tool is not yet mature, the demand for ArF high-contrast resist becomes stronger than ever. In this paper, we discuss the impact of photosensitive quenchers to lithographic performance. Two types of photosensitive quencher, photo-base generator (PBG) and photo decomposable quencher (PDQ), are studied for its ability to extend the life of immersion ArF lithography. With conventional photoresists using normal non-photosensitive quenchers, the aerial image was substantially linearly transferred to the acid image of the photoresist stimulated by photo acid generator (PAG). The new PBG or PDQ serves as one additional photosensitive component. Such photosensitive quencher changes its base level after exposure. Thus, it modifies the aerial image for better imaging performance. We will present and discuss the imaging results from various formulations of photosensitive quencher and variation in its concentration. The defect performance of these new approaches will also be characterized.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. W. Wang, C. Y. Chang, and Y. Ku "Photobase generator and photo decomposable quencher for high-resolution photoresist applications", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390W (29 March 2010); https://doi.org/10.1117/12.848623
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CITATIONS
Cited by 2 scholarly publications and 15 patents.
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KEYWORDS
Photoresist materials

Lithography

Diffusion

Line width roughness

Photo decomposable quencher

Polymers

Electron beam lithography

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