Process characterization of pitch-split resist materials for application at 16nm node

Steven J. Holmes; Cherry Tang; John C. Arnold; Yunpeng Yin; Rex Chen; Nicolette Fender; Brian Osborn; Gary Dabbagh; Sen Liu; Matthew Colburn; Rao P. Varanasi; Mark Slezak

doi:10.1117/12.846891

25 March 2010 Process characterization of pitch-split resist materials for application at 16nm node

Steven J. Holmes, Cherry Tang, John C. Arnold, Yunpeng Yin, Rex Chen, Nicolette Fender, Brian Osborn, Gary Dabbagh, Sen Liu, Matthew Colburn, Rao P. Varanasi, Mark Slezak

Author Affiliations +

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76392X (2010) https://doi.org/10.1117/12.846891
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Lithographic scaling beyond the 22 nm node requires double patterning techniques to achieve pitch values below 80nm. The semiconductor industry is focusing on the development of several process techniques including track-only lithographic processing methods in order to reduce cost, cycle time and defects. Initial efforts for track-only double expose processes have relied on the use of chemical freeze materials to prevent inter-mixing of resists, and also by means of thermal curable materials. These two techniques may be complementary, in the sense that a chemical freeze may be very robust for protection of exposed regions, while thermal cure systems may provide strong protection of large unexposed areas. We will describe our results with mainly the thermal-cure double patterning resist materials, and the application of these materials to the fabrication of sub-80 nm pitch semiconductor structures. We will summarize the process window and defect capability of these materials, for both line/space and via applications.

Citation Download Citation

Steven J. Holmes, Cherry Tang, John C. Arnold, Yunpeng Yin, Rex Chen, Nicolette Fender, Brian Osborn, Gary Dabbagh, Sen Liu, Matthew Colburn, Rao P. Varanasi, and Mark Slezak "Process characterization of pitch-split resist materials for application at 16nm node", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392X (25 March 2010); https://doi.org/10.1117/12.846891

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available