Dependence of silicon thin-film growth characteristics on substrate temperature

Longzhi Lin; Haojie Zhang; Shaoji Jiang

doi:10.1117/12.866389

22 October 2010 Dependence of silicon thin-film growth characteristics on substrate temperature

Longzhi Lin, Haojie Zhang, Shaoji Jiang

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 765802 (2010) https://doi.org/10.1117/12.866389
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

Silicon thin-films are fabricated on quartz substrates in the substrate temperature range 500~600 °C by electron-beam evaporation (EBE). Scanning Electron Microscopy (SEM) is employed to characterize the surface morphology of the films and measure the grain size. It is found that, there is an optimum temperature for getting large grain size. The X-ray diffraction (XRD) results show that the preferred crystallographic orientation on quartz wafer is (111). Raman spectra demonstrate the crystallization condition of the films and the crystalline volume fraction are calculated. The results indicate that the growth characteristics of the films depend significantly on the substrate temperature. Silicon thin-films are observed to be amorphous under the temperature of 560 °; above this temperature, they are polycrystalline. In other words, 560 °C is the critical temperature of the films transforming from amorphous silicon to poly-Si. The optimum temperature at about 580 ° for the growth of the film on quartz substrates is obtained. The films exhibit the largest grain size, highest value of crystalline volume fraction and the best structural quality when the substrate is kept at this temperature.

Citation Download Citation

Longzhi Lin, Haojie Zhang, and Shaoji Jiang "Dependence of silicon thin-film growth characteristics on substrate temperature", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765802 (22 October 2010); https://doi.org/10.1117/12.866389

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available