Paper
17 May 2010 Blue and red electroluminescence of silicon-rich oxide light emitting capacitors
A. Morales-Sánchez, M. Aceves-Mijares, A. A. González-Fernández, K. Monfil-Leyva, J. Juvert, C. Domínguez-Horna
Author Affiliations +
Abstract
Electroluminescent properties of thin silicon-rich oxide (SRO) films deposited by low pressure chemical vapor deposition (LPCVD) were studied. The gas flow ratio Ro = N2O/SiH4 was changed to obtain different silicon concentrations within the SRO films. After deposition, SRO films were thermally annealed at 1100ºC for 3h in N2 atmosphere in order to create silicon nanoparticles (Si-nps). Simple capacitive structures like Polysilicon/SRO/n-Si were used for the study. These light emitting capacitors (LECs) show intense blue (~466) and red EL (~685) at room temperature depending on the silicon excess within the SRO films. Electroluminescence in these LECs is obtained at direct current (DC) at both forward and reverse bias conditions. Nevertheless, a stronger whole area EL is obtained when devices are forwardly biased.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Morales-Sánchez, M. Aceves-Mijares, A. A. González-Fernández, K. Monfil-Leyva, J. Juvert, and C. Domínguez-Horna "Blue and red electroluminescence of silicon-rich oxide light emitting capacitors", Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 77190N (17 May 2010); https://doi.org/10.1117/12.854433
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon

Electroluminescence

Silicon films

Annealing

Low pressure chemical vapor deposition

Capacitors

Oxides

Back to Top