Traveling wave modeling, simulation, and analysis of quantum-dot mode-locked semiconductor lasers

Mindaugas Radziunas; Andrei G. Vladimirov; Evgeny A. Viktorov

doi:10.1117/12.853825

27 April 2010 Traveling wave modeling, simulation, and analysis of quantum-dot mode-locked semiconductor lasers

Mindaugas Radziunas, Andrei G. Vladimirov, Evgeny A. Viktorov

Proceedings Volume 7720, Semiconductor Lasers and Laser Dynamics IV; 77200X (2010) https://doi.org/10.1117/12.853825
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an optical mode analysis of operation regimes are presented.

Citation Download Citation

Mindaugas Radziunas, Andrei G. Vladimirov, and Evgeny A. Viktorov "Traveling wave modeling, simulation, and analysis of quantum-dot mode-locked semiconductor lasers", Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77200X (27 April 2010); https://doi.org/10.1117/12.853825

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