Photoluminescence enhancement of semiconducting-carbon-nanotubes-based thin films

Etienne Gaufres; Nicolas Izard; Xavier Le Roux; Delphine Marris-Morini; Said Kazaoui; Eric Cassan; Laurent Vivien

doi:10.1117/12.853710

18 May 2010 Photoluminescence enhancement of semiconducting-carbon-nanotubes-based thin films

Etienne Gaufres, Nicolas Izard, Xavier Le Roux, Delphine Marris-Morini, Said Kazaoui, Eric Cassan, Laurent Vivien

Proceedings Volume 7722, Organic Photonics IV; 77220Y (2010) https://doi.org/10.1117/12.853710
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

Semiconducting single wall carbon nanotubes (s-SWNT) are unique monodimensional material of particular interest in photonics for their direct band-gap, allowing tunable near-IR luminescence from electron-hole recombinaison. However, the presence of metallic nanotubes and impurities in real carbon nanotubes samples creates several non radiative relaxation mechanisms, leading to an effective quenching of s-SWNT photoluminescence and limiting their usability in photonics devices. Recently, we have developed a process to selectively extract s-SWNT and embedded them in polyfluorene (PFO) thin films. A removal of metallic nanotubes leads to an enhancement of the photoluminescence properties, with a 6-fold increase of the photoluminescence intensity of (8,6) s-SWNT. Development of nanotubes based photonics devices is also reported. The SWNT-based layer was inserted between two Bragg mirrors to form a Fabry-Perot cavity, leading to a huge photoluminescence enhancement by a factor of 30 in comparison with an identical film and by a factor of 180 in comparison with a non s-SWNT enriched film.

Citation Download Citation

Etienne Gaufres, Nicolas Izard, Xavier Le Roux, Delphine Marris-Morini, Said Kazaoui, Eric Cassan, and Laurent Vivien "Photoluminescence enhancement of semiconducting-carbon-nanotubes-based thin films", Proc. SPIE 7722, Organic Photonics IV, 77220Y (18 May 2010); https://doi.org/10.1117/12.853710

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