Coulomb staircase in fused semiconducting InP nanowires under light illumination

Hidenori Yamada; Toshishige Yamada; Andrew J. Lohn; Nobuhiko P. Kobayashi

doi:10.1117/12.860903

27 August 2010 Coulomb staircase in fused semiconducting InP nanowires under light illumination

Hidenori Yamada, Toshishige Yamada, Andrew J. Lohn, Nobuhiko P. Kobayashi

Proceedings Volume 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II; 77680B (2010) https://doi.org/10.1117/12.860903
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

Detailed electron transport analysis is performed for an ensemble of conical indium phosphide nanowires bridging two hydrogenated n+-silicon electrodes. The current-voltage (Id-Vd) characteristics exhibit a Coulomb staircase in dark with a period of ~ 1 V at room temperature. The staircase is found to disappear under light illumination. This observation can be explained by assuming the presence of a tiny Coulomb island, and its existence is possible due to the large surface depletion region created within contributing nanowires. Electrons tunnel in and out of the Coulomb island, resulting in the Coulomb staircase Id-Vd. Applying light illumination raises the electron quasi-Fermi level and the tunneling barriers are buried, causing the Coulomb staircase to disappear.

Citation Download Citation

Hidenori Yamada, Toshishige Yamada, Andrew J. Lohn, and Nobuhiko P. Kobayashi "Coulomb staircase in fused semiconducting InP nanowires under light illumination", Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 77680B (27 August 2010); https://doi.org/10.1117/12.860903

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