Temperature-dependent structural characterization of silicon <110> nanowires

Min-Ki Kwon; Ja-Yeon Kim; Logeeswaran V. J.; Yi-Ju Teng; Hui-Lin Hsu; Patricia Abellán Baeza; Ilke Arslan; M. Saif Islam

doi:10.1117/12.861606

27 August 2010 Temperature-dependent structural characterization of silicon <110> nanowires

Min-Ki Kwon, Ja-Yeon Kim, Logeeswaran V. J., Yi-Ju Teng, Hui-Lin Hsu, Patricia Abellán Baeza, Ilke Arslan, M. Saif Islam

Author Affiliations +

Proceedings Volume 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II; 77680H (2010) https://doi.org/10.1117/12.861606
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

For high speed and performance field effect transistor with high carrier mobility, vertically aligned Si <110> nanowires is demonstrated by chemical vapor deposition via a vapor-liquid-solid growth mechanism. We found that the orientation of NWs was changed from <111> direction to <110> direction on a Si (110) substrate with increasing the growth temperature above ~ 610°C by changing Au-Si eutectic phase. These vertically aligned <110> oriented SiNWs with significantly high carrier mobility opens up new opportunities for high speed and performance future electronic device applications.

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Min-Ki Kwon, Ja-Yeon Kim, Logeeswaran V. J., Yi-Ju Teng, Hui-Lin Hsu, Patricia Abellán Baeza, Ilke Arslan, and M. Saif Islam "Temperature-dependent structural characterization of silicon <110> nanowires", Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 77680H (27 August 2010); https://doi.org/10.1117/12.861606

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