Paper
19 August 2010 Optimization of readout circuit with background suppression for dual-band quantum well infrared focal plane array photodetector
Yi-Chuan Lu, Tai-Ping Sun, Hsiu-Li Shieh, Jian-Cheng Ye, Sen-Chuan Hung, Meng-Lieh Sheu, Shiang-Feng Tang, Wen-Jen Lin
Author Affiliations +
Abstract
This paper discusses about a readout circuit for Dual-Band Quantum Well Infrared Photo-detectors (DBQWIP) interlaced focal plane array infrared image system. In this research, we will present the study of modified dark-current cancellation circuit. The sensing photo-current from 1nA to 10nA of long-wave infrared signal, mid-wave infrared photo-current is about 100pA to 1nA, the dark current is set up to 100nA. The area of unit pixel is 30×30μm2 . The 8×6 focal-plane array is designed by using TSMC 0.35μm 2P4M CMOS process. This work has 3.3V power supply and readouts data at 2.5MHz clock rate. The simulated output voltage range of LWIR and MWIR photo-current are 0.95v and 0.76v, respectively.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi-Chuan Lu, Tai-Ping Sun, Hsiu-Li Shieh, Jian-Cheng Ye, Sen-Chuan Hung, Meng-Lieh Sheu, Shiang-Feng Tang, and Wen-Jen Lin "Optimization of readout circuit with background suppression for dual-band quantum well infrared focal plane array photodetector", Proc. SPIE 7780, Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon, 778018 (19 August 2010); https://doi.org/10.1117/12.860605
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KEYWORDS
Mid-IR

Infrared radiation

Cadmium sulfide

Staring arrays

Long wavelength infrared

Infrared detectors

Sensors

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