Special features of conductivity of semi-intrinsic CdTe and CdZnTe single crystals used in x- and gamma-ray detectors

L. A. Kosyachenko; E. Diequez; T. Aoki; C. P. Lambropoulos; V. A. Gnatyuk; M. Fiederle; S. V. Melnychuk; O. L. Maslyanchuk; O. F. Sklyarchuk; O. V. Sklyarchuk; E. V. Grushko

doi:10.1117/12.862726

27 August 2010 Special features of conductivity of semi-intrinsic CdTe and CdZnTe single crystals used in X- and γ-ray detectors

L. A. Kosyachenko, E. Diequez, T. Aoki, C. P. Lambropoulos, V. A. Gnatyuk, M. Fiederle, S. V. Melnychuk, O. L. Maslyanchuk, O. F. Sklyarchuk, O. V. Sklyarchuk, E. V. Grushko

Author Affiliations +

Proceedings Volume 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII; 78051I (2010) https://doi.org/10.1117/12.862726
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States

Abstract

The temperature dependences of the resistivity of detector-grade semi-insulating CdTe and Cd_0.9Zn_0.1Te single crystals were investigated. The investigations have revealed that the thermal activation energy can be higher than E_g/2 at T → 0 K or considerably less than this value, although the Fermi level is located near the middle of the band gap. It is shown that such an "anomalous" behavior of the electrical characteristics is explained in detail by the features of the compensation of deep acceptor levels in the semiconductor band gap. A method based on the electroneutrality equation is proposed for the determination of the ionization energy and compensation degree of the impurity (defect), which is responsible for the conductivity of the material. The results extracted with the use of this method lead to the prediction that the inversion of the conductivity type of the semiconductor under certain conditions can occur as the temperature varies during operation of a Cd(Zn)Te-based device.

Citation Download Citation

L. A. Kosyachenko, E. Diequez, T. Aoki, C. P. Lambropoulos, V. A. Gnatyuk, M. Fiederle, S. V. Melnychuk, O. L. Maslyanchuk, O. F. Sklyarchuk, O. V. Sklyarchuk, and E. V. Grushko "Special features of conductivity of semi-intrinsic CdTe and CdZnTe single crystals used in X- and γ-ray detectors", Proc. SPIE 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII, 78051I (27 August 2010); https://doi.org/10.1117/12.862726

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available