Resolution capacity of Hall microsensors in MOS structures

George Căruntu; Cornel Panait; Irina Căruntu

doi:10.1117/12.882371

4 December 2010 Resolution capacity of Hall microsensors in MOS structures

George Căruntu, Cornel Panait, Irina Căruntu

Proceedings Volume 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V; 78211Z (2010) https://doi.org/10.1117/12.882371
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, 2010, Constanta, Romania

Abstract

An essential parameter in the setting up of the performance of the measurement systems that uses Hall microsensors is the detection limit of such devices. The paper presents the results of research work regarding the analysis and optimization of magnetic microsensor structures realized in bipolar and MOS integrated circuits technology. On the basis of adequate models these have been established the noise main characteristics for double collector vertical magnetotransistor and for double-drain MOSFET magnetotransistors. By using the numerical simulation the values of the signal-to-noise ratio and the detection limits for the two analysed structured are compared and it is also emphasized the way in which choosing the geometry and the material features allow getting high-performance sensors.

Citation Download Citation

George Căruntu, Cornel Panait, and Irina Căruntu "Resolution capacity of Hall microsensors in MOS structures", Proc. SPIE 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V, 78211Z (4 December 2010); https://doi.org/10.1117/12.882371

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