Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers

Yan Chen; Luhong Mao; Weilian Guo; Shilin Zhang; Sheng Xie; Jinlong Yu; Xin Yu; Xianjie Li; Lifang Qi; Xiao Gu

doi:10.1117/12.869789

12 November 2010 Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers

Yan Chen, Luhong Mao, Weilian Guo, Shilin Zhang, Sheng Xie, Jinlong Yu, Xin Yu, Xianjie Li, Lifang Qi, Xiao Gu

Proceedings Volume 7844, Semiconductor Lasers and Applications IV; 78440N (2010) https://doi.org/10.1117/12.869789
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

We demonstrate optical bistability in InP/InAlGaAs multi-quantum well(MQW) semiconductor ring lasers(SRL) which are fabricated by the use of inductively coupled plasma reactive ion etching (ICP-RIE) and can be used in a multi-ring to achieve all-optical storage. Unlike other international reports, the observed optical bistability has unidirectional regime started directly from the threshold, skip the first two regimes and greatly reduce the injection current required in applications. The device described in this article achieves threshold current 56mA which is quite low compared to other reported devices, and some analysis and experiments on the etching depth have been done.

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Yan Chen, Luhong Mao, Weilian Guo, Shilin Zhang, Sheng Xie, Jinlong Yu, Xin Yu, Xianjie Li, Lifang Qi, and Xiao Gu "Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers", Proc. SPIE 7844, Semiconductor Lasers and Applications IV, 78440N (12 November 2010); https://doi.org/10.1117/12.869789

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