Large blue shift of the absorption edge in modified potential InGaAs/InAlAs coupled quantum wells

Zhixin Xu; Changrong Wang; Zhefeng Yuan; Wei Qi

doi:10.1117/12.865805

17 November 2010 Large blue shift of the absorption edge in modified potential InGaAs/InAlAs coupled quantum wells

Zhixin Xu, Changrong Wang, Zhefeng Yuan, Wei Qi

Proceedings Volume 7847, Optoelectronic Devices and Integration III; 78471H (2010) https://doi.org/10.1117/12.865805
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

We designed and experimentally reported modified potential InGaAs/InAlAs coupled quantum wells. In this structure, a large blue shift of the absorption edge of more than 35 meV is obtained at a reverse bias of -4 V. This predicts that a large negative electrorefractive index change can be achieved at longer wavelength region of the absorption edge.

Citation Download Citation

Zhixin Xu, Changrong Wang, Zhefeng Yuan, and Wei Qi "Large blue shift of the absorption edge in modified potential InGaAs/InAlAs coupled quantum wells", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78471H (17 November 2010); https://doi.org/10.1117/12.865805

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