747 nm Pr:YAP microchip-laser output characteristics

Martin Fibrich; Helena Jelínková; Jan Šulc; Karel Nejezchleb; Václav Škoda

doi:10.1117/12.873046

3 March 2011 747 nm Pr:YAP microchip-laser output characteristics

Martin Fibrich, Helena Jelínková, Jan Šulc, Karel Nejezchleb, Václav Škoda

Proceedings Volume 7912, Solid State Lasers XX: Technology and Devices; 79121X (2011) https://doi.org/10.1117/12.873046
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

Laser characteristics of Pr:YAlO3 microchip laser operating in the near-infrared spectral region are reported. For active medium pumping, GaN laser diode providing up to 1 W of output power at ~448 nm was employed. Microchip resonator was formed by dielectric mirrors directly deposited on the Pr:YAlO3 crystal surfaces. The continuous-wave output radiation at 747 nm with maximum power of 139 mW has been extracted from the microchip laser system. Slope efficiency related to the incident pumping power was 25%.

Citation Download Citation

Martin Fibrich, Helena Jelínková, Jan Šulc, Karel Nejezchleb, and Václav Škoda "747 nm Pr:YAP microchip-laser output characteristics", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79121X (3 March 2011); https://doi.org/10.1117/12.873046

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