Paper
21 February 2011 Optical elements for optimal brightness of single emitter devices
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Abstract
Semiconductor lasers play an important role in many applications. Depending on the wavelength of the emitted laser light in the blue (e.g. 405-445 nm), red (~ 650 nm), near infrared (780 - 1070 nm) and e.g. the eye-safe wavelength region around 1500 nm a manifold of applications exist. Due to their increasing power and brightness single emitter devices are becoming increasingly widely used for the assembly and packaging of high power diode lasers. In the near infrared typical emitter widths are 50, 90 (100) and 200 μm with power levels available > 15 W. Also larger stripes are available - up to 1000 μm - with power levels > 25W. For highest power laser devices not only the power of the emitter is important - but of equal importance is the subsequent optics to collect all the emitted power while maintaining the brightness of the source. High NA acylindrical micro-lenses very well account for the strong asymmetric emitter characteristics of the fast and slow axis and thus, result in best collimation and coupling efficiencies in contrast to spherical lenses. LIMO's cost-effective micro-optics wafer technology is most suited for such acylindrical optics. It allows the manufacture of different materials to cover wavelengths ranges from the UV to the NIR, e.g. 380 - 2000 nm. Since both sides of a wafer can be structured with crossed cylindrical lenses one single monolithic optical element simultaneously shapes the fast and slow axis of the emitted light. Additionally, mechanical reference planes can be integrated in such monolithic optics for precise and simple integration. Application examples for collimation and fiber coupling optics in the near infrared as well as focussing/pump optics in the blue wavelength range are shown.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O. Homburg, M. Jarczynski, and T. Mitra "Optical elements for optimal brightness of single emitter devices", Proc. SPIE 7918, High-Power Diode Laser Technology and Applications IX, 791813 (21 February 2011); https://doi.org/10.1117/12.874577
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KEYWORDS
Collimation

Optics manufacturing

Fiber couplers

Near infrared

Semiconducting wafers

Semiconductor lasers

Wafer-level optics

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