Power scaling of the MIXSEL: an integrated picosecond semiconductor laser with >6 W average power

T. Südmeyer

doi:10.1117/12.874184

21 February 2011 Power scaling of the MIXSEL: an integrated picosecond semiconductor laser with >6 W average power

T. Südmeyer

Proceedings Volume 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs); 79190R (2011) https://doi.org/10.1117/12.874184
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

Semiconductor lasers have the potential to drastically reduce complexity and cost of high power ultrafast lasers. Optically-pumped VECSELs achieved >20 W cw-power in fundamental transverse mode. Passive modelocking with a SESAM enabled 2.1-W average power, sub-100 fs duration, and 50-GHz repetition rate. In 2007, the integration of both elements was demonstrated, the MIXSEL (modelocked integrated external-cavity surface-emitting laser). Here we present a novel MIXSEL design based on a low-saturation fluence quantum dot (QD) absorber layer in an antiresonant structure. Improved thermal management with a CVD-diamond enabled a >30-fold power increase to 6.4 W, higher than any other ultrafast semiconductor laser.

Citation Download Citation

T. Südmeyer "Power scaling of the MIXSEL: an integrated picosecond semiconductor laser with >6 W average power", Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 79190R (21 February 2011); https://doi.org/10.1117/12.874184

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KEYWORDS

Semiconductor lasers

Mode locking

Semiconductors

Picosecond phenomena

Diamond

Output couplers

Quantum dots

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