Paper
11 August 1987 Tunable Electroabsorption And Electroluminescence In GaAs Doping Superlattices
C. J. Chang-Hasnain, G. Hasnain, G. H. Dohler, N. M. Johnson, J. N. Miller, J. R. Whinnery, A. Dienes
Author Affiliations +
Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940819
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Tunability of the optical absorption spectrum with electrical bias in GaAs doping super-lattices (n-i-p-i crystals) is demonstrated by both photoconductivity and direct transmis-sion measurements. A linear change of transmission of up to 22% is achieved at 0.89 μm wavelength through a 2.1 μm thick n-i-p-i crystal by varying the p-n junction bias between -2.0 V and 0.6 V. Highly tunable and efficient electroluminescence is also observed in strongly doped n-i-p-i crystals at room temperature with peak energies shifted more than 600 meV below the bulk bandgap (λ > 1.55 μm).
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. J. Chang-Hasnain, G. Hasnain, G. H. Dohler, N. M. Johnson, J. N. Miller, J. R. Whinnery, and A. Dienes "Tunable Electroabsorption And Electroluminescence In GaAs Doping Superlattices", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940819
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KEYWORDS
Electroluminescence

Gallium arsenide

Absorption

Doping

Crystals

Superlattices

Modulation

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