Paper
3 August 1987 Optical Transitions And Enhanced Recombination Lifetimes In Quasi-Zero Dimensional Electron System In CdSxSe1-x
Kai Shum, G. C. Tang, Mahesh R. Junnarkar, R. R. Alfano
Author Affiliations +
Proceedings Volume 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors; (1987) https://doi.org/10.1117/12.940877
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The recombination lifetimes for the radial and angular quantum number conserving 1S→1S and 1P→1P transitions from three-dimensionally confined electrons in CdSxSel-x were measured by time-resolved photoluminescence. The assignment of the observed transitions is supported by calculations of eigen energy levels, squared matrix element ratio for those transitions, steady-state and picosecond spectroscopic studies.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kai Shum, G. C. Tang, Mahesh R. Junnarkar, and R. R. Alfano "Optical Transitions And Enhanced Recombination Lifetimes In Quasi-Zero Dimensional Electron System In CdSxSe1-x", Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); https://doi.org/10.1117/12.940877
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Cited by 3 scholarly publications.
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KEYWORDS
Luminescence

Excitons

Picosecond phenomena

Crystals

Transition metals

Semiconductors

Photons

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