Electro-Optic Sampling In Gallium Arsenide

Brian H. Kolner

doi:10.1117/12.940952

2 February 1988 Electro-Optic Sampling In Gallium Arsenide

Brian H. Kolner

Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940952
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Electro-optic sampling uses short optical pulses to measure high-speed electrical waveforms propagating in electro-optic crystals. Since GaAs is electro-optic, a perfect application of this technique is the noninvasive probing of signals propagating in devices and circuits made in this and related compound semiconductors. Principles, limitations and applications to high-speed circuit characterization will be discussed.

Citation Download Citation

Brian H. Kolner "Electro-Optic Sampling In Gallium Arsenide", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); https://doi.org/10.1117/12.940952

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