Verification and extension of the MBL technique for photo resist pattern shape measurement

Miki Isawa; Maki Tanaka; Hideyuki Kazumi; Chie Shishido; Akira Hamamatsu; Norio Hasegawa; Peter De Bisschop; David Laidler; Philippe Leray; Shaunee Cheng

doi:10.1117/12.878960

20 April 2011 Verification and extension of the MBL technique for photo resist pattern shape measurement

Miki Isawa, Maki Tanaka, Hideyuki Kazumi, Chie Shishido, Akira Hamamatsu, Norio Hasegawa, Peter De Bisschop, David Laidler, Philippe Leray, Shaunee Cheng

Author Affiliations +

Proceedings Volume 7971, Metrology, Inspection, and Process Control for Microlithography XXV; 79710Z (2011) https://doi.org/10.1117/12.878960
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

In order to achieve pattern shape measurement with CD-SEM, the Model Based Library (MBL) technique is in the process of development. In this study, several libraries which consisted by double trapezoid model placed in optimum layout, were used to measure the various layout patterns. In order to verify the accuracy of the MBL photoresist pattern shape measurement, CDAFM measurements were carried out as a reference metrology. Both results were compared to each other, and we confirmed that there is a linear correlation between them. After that, to expand the application field of the MBL technique, it was applied to end-of-line (EOL) shape measurement to show the capability. Finally, we confirmed the possibility that the MBL could be applied to more local area shape measurement like hot-spot analysis.

Citation Download Citation

Miki Isawa, Maki Tanaka, Hideyuki Kazumi, Chie Shishido, Akira Hamamatsu, Norio Hasegawa, Peter De Bisschop, David Laidler, Philippe Leray, and Shaunee Cheng "Verification and extension of the MBL technique for photo resist pattern shape measurement", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79710Z (20 April 2011); https://doi.org/10.1117/12.878960

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