Paper
18 February 2011 Silicon nitride films as the diffusion barriers for flexible CIGS thin film solar cells
Juan Qin, Aimin Li, Zhenyi Chen, Lei Zhao, Xiaoli Zhang, Weimin Shi, Guangpu Wei
Author Affiliations +
Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79952Y (2011) https://doi.org/10.1117/12.888292
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
Impurity diffusion from the flexible metal substrate into CIGS absorption layer can remarkably reduce cell performance comparing with conventional glass substrate. A diffusion barrier layer lying between the metal substrate and Mo backcontact layer is required to prevent this spread of impurities. In this paper, a set of Si3+xN4-x barrier layers are grown on stainless steel sheets and alloy foils by the magnetron sputtering under different conditions. The morphological, structural and electrical properties of the samples are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and I-V measurements. Our results indirectly support good blocking effect of Si3+xN4-x barrier to the metal impurities from the stainless steel substrate.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juan Qin, Aimin Li, Zhenyi Chen, Lei Zhao, Xiaoli Zhang, Weimin Shi, and Guangpu Wei "Silicon nitride films as the diffusion barriers for flexible CIGS thin film solar cells", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952Y (18 February 2011); https://doi.org/10.1117/12.888292
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KEYWORDS
Copper indium gallium selenide

Diffusion

Metals

Molybdenum

Silicon

Silicon films

Sputter deposition

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