Silicon nanowire solar cells with a-Si heterojunction showing 7.3% efficiency

Fritz Falk; Guobin Jia; Gudrun Andrä; Ingo Sill; Nikolay Petkov

doi:10.1117/12.897369

20 September 2011 Silicon nanowire solar cells with a-Si heterojunction showing 7.3% efficiency

Fritz Falk, Guobin Jia, Gudrun Andrä, Ingo Sill, Nikolay Petkov

Proceedings Volume 8111, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II; 81110Q (2011) https://doi.org/10.1117/12.897369
Event: SPIE Solar Energy + Technology, 2011, San Diego, California, United States

Abstract

Core-shell silicon nanowire (SiNW) solar cells with an a-Si heterojunction were prepared on SiNW arrays, which were etched into n-type silicon wafers or into n-doped multicrystalline silicon thin films on glass substrates. A stack of intrinsic and p-doped hydrogenated a-Si was deposited as a shell around the SiNWs by PECVD, acting as a heteroemitter of the solar cells. Finally a TCO layer consisting of aluminum doped zinc oxide was deposited on top of the a-Si by atomic layer deposition. In a mesa-structured solar cell (area 7 mm2) an open circuit voltage of 476 mV and an efficiency of 7.3% were achieved under AM 1.5 illumination. Electron beam induced current measurements show clear evidence that most of the photo-current comes from the thin SiNW layer.

Citation Download Citation

Fritz Falk, Guobin Jia, Gudrun Andrä, Ingo Sill, and Nikolay Petkov "Silicon nanowire solar cells with a-Si heterojunction showing 7.3% efficiency", Proc. SPIE 8111, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II, 81110Q (20 September 2011); https://doi.org/10.1117/12.897369

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