Paper
7 September 2011 Fast behavioral modeling of organic CMOS devices for digital and analog circuit applications
Stephanie Jacob, Anis Daami, Romain Gwoziecki, Romain Coppard, Rachid Hamani, Mathieu Guerin, Emmanuel Bergeret, Philippe Pannier
Author Affiliations +
Abstract
Organic thin film technologies have opened a new range of interest into the optoelectronics industry. Nevertheless the physics and devices modeling still present a lack of accuracy. In order to provide designers with the latest performances of our organic CMOS technology, we have compared the performances of a behavioral model to the public a-Si TFT model in terms of accuracy on device modeling and basic circuit simulations. Fully printed organic CMOS devices and circuits have been processed and characterized in order to validate our device models. In particular, measurements have been carried out on several digital circuits like inverters and ring oscillators. Analog circuits such as current mirrors and differential pairs have also been measured. Simulations of these circuits have been performed using the device behavioral model and the a-Si TFT one under common EDA commercial tools. We show that both kinds of models enable to reproduce the different simple CMOS circuits performances in static as well as in dynamic modes which can open the way for designing a wide range and more complex digital and analog organic applications.
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Stephanie Jacob, Anis Daami, Romain Gwoziecki, Romain Coppard, Rachid Hamani, Mathieu Guerin, Emmanuel Bergeret, and Philippe Pannier "Fast behavioral modeling of organic CMOS devices for digital and analog circuit applications", Proc. SPIE 8117, Organic Field-Effect Transistors X, 81170Q (7 September 2011); https://doi.org/10.1117/12.892709
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Cited by 6 scholarly publications.
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KEYWORDS
Instrument modeling

Amorphous silicon

Analog electronics

Data modeling

Device simulation

Digital electronics

Mathematical modeling

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