Defect creation by swift heavy ion induced secondary electrons

Naresh C. Mishra; Rajib Biswal; Dinakar Kanjilal; Devesh K. Avasthi

doi:10.1117/12.893025

13 September 2011 Defect creation by swift heavy ion induced secondary electrons

Naresh C. Mishra, Rajib Biswal, Dinakar Kanjilal, Devesh K. Avasthi

Proceedings Volume 8144, Penetrating Radiation Systems and Applications XII; 814406 (2011) https://doi.org/10.1117/12.893025
Event: SPIE Optical Engineering + Applications, 2011, San Diego, California, United States

Abstract

Evolution of c-axis oriented YBa₂Cu₃O_7-y (YBCO) thin films under 200 MeV Ag ion irradiation at 79 K is studied by in-situ temperature dependent resistivity and in-situ low temperature x-ray diffraction. The electronic energy loss (25.18 keV nm^-1) of these ions is shown to induce secondary electrons, which create oxygen disorder selectively in the CuO basal planes of fully oxygenated YBCO in a cylindrical region of radius 97 nm around the ion induced latent tracks of radius 1.9 nm. This technique provides a unique way of creating oxygen disorder in a fully oxygenated YBCO, which was not possible earlier.

Citation Download Citation

Naresh C. Mishra, Rajib Biswal, Dinakar Kanjilal, and Devesh K. Avasthi "Defect creation by swift heavy ion induced secondary electrons", Proc. SPIE 8144, Penetrating Radiation Systems and Applications XII, 814406 (13 September 2011); https://doi.org/10.1117/12.893025

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