Subnanosecond bulk damage thresholds of single-crystal YAG and diffusion-bonded YAG structures at 1 micron

Robert D. Stultz; Karen E. Yokoyama; Jeanette Lurier; Michael Ushinsky; Robert W. Farley; Mark E. Rogers; Brendan J. Foran; Michael D. Thomas; Andrew J. Griffin

doi:10.1117/12.899148

22 November 2011 Subnanosecond bulk damage thresholds of single-crystal YAG and diffusion-bonded YAG structures at 1 micron

Robert D. Stultz, Karen E. Yokoyama, Jeanette Lurier, Michael Ushinsky, Robert W. Farley, Mark E. Rogers, Brendan J. Foran, Michael D. Thomas, Andrew J. Griffin

Author Affiliations +

Proceedings Volume 8190, Laser-Induced Damage in Optical Materials: 2011; 81900M (2011) https://doi.org/10.1117/12.899148
Event: SPIE Laser Damage, 2011, Boulder, Colorado, United States

Abstract

Laser bulk damage thresholds were measured for both single-crystal YAG and for diffusion-bonded YAG structures using 600 picosecond pulses at 1064 nm. The tested samples included 3-layer sandwich structures with doped cores of various thicknesses. An undoped-YAG end cap was diffusion-bonded on one end of each of the sandwiches. The 1064 nm laser source was focused to a 13 micron diameter spot at the boundary region between the core and the undoped endcap. Measurements included the evaluation of single- and multiple-pulse damage thresholds at single sites, as well as thresholds for continuous 90%-overlap scans. The single-site thresholds at the diffusion-bonded boundary were close to that of single-crystal YAG. However, the continuous scans revealed isolated microscopic sites where the damage threshold was as much as 4 times lower than that of single-crystal YAG.

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Robert D. Stultz, Karen E. Yokoyama, Jeanette Lurier, Michael Ushinsky, Robert W. Farley, Mark E. Rogers, Brendan J. Foran, Michael D. Thomas, and Andrew J. Griffin "Subnanosecond bulk damage thresholds of single-crystal YAG and diffusion-bonded YAG structures at 1 micron", Proc. SPIE 8190, Laser-Induced Damage in Optical Materials: 2011, 81900M (22 November 2011); https://doi.org/10.1117/12.899148

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