Fabrication and low temperature characteristics of InGaAs detector

Yanqiu Lv; Qingduan Meng

doi:10.1117/12.897576

8 September 2011 Fabrication and low temperature characteristics of InGaAs detector

Yanqiu Lv, Qingduan Meng

Proceedings Volume 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications; 81930H (2011) https://doi.org/10.1117/12.897576
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

Planar InGaAs/InP p-i-n photodiodes have been successfully fabricated, and its spectral response, current-voltage characteristic, photogenerated signal and noise were measured at 300 K and 77 K with the blackbody temperature fixed at 900 K. It was found that the measured voltage signals reduced from 14.0 mV to 7.0 mV when the temperature decreased from 300 K to 77 K. All measured results at 77 K show that the peak voltage responsivity of InGaAs detector is R_vp= 2.41×10⁷ V/W, and its peak detectivity D_p* = 1.51×10¹² (cmHz)^1/2/W. Measurement of transmittance spectral indicated that the transmittance rate is over 80% at middle wavelength range. The results show that short wavelength infrared InGaAs detector can be integrated with middle wavelength infrared detector to form dual-band detector worked at liquid nitrogen temperature.

Citation Download Citation

Yanqiu Lv and Qingduan Meng "Fabrication and low temperature characteristics of InGaAs detector", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81930H (8 September 2011); https://doi.org/10.1117/12.897576

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