Paper
8 September 2011 The characteristic analysis and optimization design for HgCdTe TDI infrared detector array
Mei-feng Dong, Xing Chen, Guang-yin Qiu, Xiao-hui Xie
Author Affiliations +
Abstract
Time Delay Integration (TDI) is an effective approach for high sensitive infrared detectors. According to the principle of the TDI, the central distance of pixel along the time delay integral direction is closely linked with the specific application requirements. So the optimization design, such as the area of pixels and their distance, plays an important role to improve the performance of TDI detectors. The crosstalk between pixels is a crucial factor that results in the decline of detector Modulation Transfer Function (MTF), and then affects the imaging quality. In this paper the optimization design rule for the arrangement of pixel has been investigated. The results show that the main method to appreciate it is reducing the crosstalk between pixels and enhancing detectivity. Chips of which pixel areas and edge intervals are different but with same distance were designed for the experiments. The optical and electrical measurements were carried out for these chips and the optimized structure was obtained. In addition, relationships between the crosstalk and parameters of material, pixel structure were analyzed based on the experiment data. According to the comprehensive analysis of the measurement data, we obtained the optimum design for specific HgCdTe TDI infrared detector. Meanwhile it is also a well reference for other HgCdTe TDI detector structure design.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mei-feng Dong, Xing Chen, Guang-yin Qiu, and Xiao-hui Xie "The characteristic analysis and optimization design for HgCdTe TDI infrared detector array", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 819344 (8 September 2011); https://doi.org/10.1117/12.901013
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KEYWORDS
Diodes

Sensors

Infrared detectors

Dubnium

Mercury cadmium telluride

Black bodies

Infrared sensors

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