Paper
16 February 2012 Very high brightness diode laser
Stefan Heinemann, Ben Lewis, Karsten Michaelis, Torsten Schmidt
Author Affiliations +
Abstract
Multiple Single Emitter (MSE) modules allow highest power and highest brightness diode lasers based on standard broad area diodes. 12 single emitters, each rated at 11 W, are stacked in fast axis and with polarization multiplexing 200W are achieved in a fully collimated beam with a beam quality of 7mm*mrad in both axes. Volume Bragg Gratings (VBG) stabilize the wavelength and narrow the linewidth to less than 2nm. Dichroic mirrors are used for dense wavelength multiplexing of 4 channels within 12 nm. 400W are measured from a 0.2 mm fiber, 0.1 NA. Control and drive electronics are integrated into the 200 W platform and represent a basic building block for a variety of applications, such as a flexible turn key system comprising 12 MSE modules. An integrated beam switch directs the light in six 100 μm, or in one 0.2 mm and one 0.1 mm fiber. 800W are measured from the six 0.1 mm fibers and 700W from the 0.2 mm fiber. The technologies can be transferred to other wavelengths to include 793 nm and 1530 nm. Narrow line gratings and optimized spectral combining enable further improvements in spectral brightness and power.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stefan Heinemann, Ben Lewis, Karsten Michaelis, and Torsten Schmidt "Very high brightness diode laser", Proc. SPIE 8241, High-Power Diode Laser Technology and Applications X, 82410L (16 February 2012); https://doi.org/10.1117/12.908828
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Cited by 6 scholarly publications.
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KEYWORDS
Multimode fibers

Semiconductor lasers

Multiplexing

Collimation

Control systems

Diodes

Electronics

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