High growth rate of AlGaN for buffer structures for GaN on Si to increase throughput

Koh Matsumoto; Akinori Ubukata; Kazutada Ikenaga; Kazuki Naito; Jun Yamamoto; Yoshiki Yano; Toshiya Tabuchi; Akira Yamaguchi; Yuzaburo Ban; Kosuke Uchiyama

doi:10.1117/12.903642

22 February 2012 High growth rate of AlGaN for buffer structures for GaN on Si to increase throughput

Koh Matsumoto, Akinori Ubukata, Kazutada Ikenaga, Kazuki Naito, Jun Yamamoto, Yoshiki Yano, Toshiya Tabuchi, Akira Yamaguchi, Yuzaburo Ban, Kosuke Uchiyama

Author Affiliations +

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 826202 (2012) https://doi.org/10.1117/12.903642
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Throughput requirement of the epitaxial process of GaN on Si is described. The impact of the growth rate of AlGaN for the buffer layer of GaN on Si is highlighted. In the attempt of growing GaN on Si, we have tested a production scale high flow speed MOVPE reactor (TAIYO NIPPON SANSO UR25k) for 6 inch X 7 wafers. Al_0.58Ga_0.42N was grown with the growth rate of 1.85μm/hr at 30 kPa. AlN was grown with the growth rate of 1.4μm/hr at 13kPa. AlN/GaN SLS (5nm/20nm) was also grown at the growth rate of 1.4μm/hr. An excellent uniformity of aluminum concentration of less than 0.5% was also obtained for Al_0.58Ga_0.42N. The challenge which we are facing to further increase of the throughput is summarized.

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Koh Matsumoto, Akinori Ubukata, Kazutada Ikenaga, Kazuki Naito, Jun Yamamoto, Yoshiki Yano, Toshiya Tabuchi, Akira Yamaguchi, Yuzaburo Ban, and Kosuke Uchiyama "High growth rate of AlGaN for buffer structures for GaN on Si to increase throughput", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826202 (22 February 2012); https://doi.org/10.1117/12.903642

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