Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes

Piotr Perlin; Tomasz Czyszanowski; Lucja Marona; Szymon Grzanka; Anna Kafar; Szymon Stanczyk; Tadek Suski; Mike Leszczyński; Michal Boćkowski; Grzegorz Muzioł; Maciej Kuc; Robert Sarzała

doi:10.1117/12.906866

27 February 2012 Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes

Piotr Perlin, Tomasz Czyszanowski, Lucja Marona, Szymon Grzanka, Anna Kafar, Szymon Stanczyk, Tadek Suski, Mike Leszczyński, Michal Boćkowski, Grzegorz Muzioł, Maciej Kuc, Robert Sarzała

Author Affiliations +

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 826216 (2012) https://doi.org/10.1117/12.906866
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Highly n-doped GaN is a material of a reduced refractive index which may substitute AlGaN as a cladding layer in InGaN laser diodes. In this study we focus on the determination of the optical absorption and the refractive index of GaN:O having the electron concentration between 1·10¹⁸ - 8·10¹⁹ cm^-3. Though the measured absorption coefficient for the highest doped GaN are rather high (200 cm^-1) we show, using an optical mode simulation, that you can design a InGaN laser diode operating in blue/green region with decent properties and low optical losses. We propose to use relatively thin AlGaN interlayer to separate plasmonic GaN from the waveguide and thus to dramatically reduce the optical losses.

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Piotr Perlin, Tomasz Czyszanowski, Lucja Marona, Szymon Grzanka, Anna Kafar, Szymon Stanczyk, Tadek Suski, Mike Leszczyński, Michal Boćkowski, Grzegorz Muzioł, Maciej Kuc, and Robert Sarzała "Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826216 (27 February 2012); https://doi.org/10.1117/12.906866

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