Second harmonic generation in GaN-based photonic crystals for single molecule investigations

Dominique Coquillat; Jérémie Torres; Marine Le Vassor d'Yerville; David Cassagne; Frédéric Teppe; Nina Dyakonova; Wojciech Knap; Richard De La Rue; Sophie Bouchoule; Emmanuel Margeat; Catherine Royer

doi:10.1117/12.905593

27 February 2012 Second harmonic generation in GaN-based photonic crystals for single molecule investigations

Dominique Coquillat, Jérémie Torres, Marine Le Vassor d'Yerville, David Cassagne, Frédéric Teppe, Nina Dyakonova, Wojciech Knap, Richard De La Rue, Sophie Bouchoule, Emmanuel Margeat, Catherine Royer

Author Affiliations +

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 82621R (2012) https://doi.org/10.1117/12.905593
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

III-Nitride semiconductors are promising nonlinear materials for optical wavelength conversion. However second harmonic generation in bulk GaN is weak because GaN is strongly dispersive. We show that appropriate photonic crystal patterning in GaN helps to overcome dispersion and provides quasi-phase matching conditions, resulting in substantially increased conversion efficiency obtained in a flexible manner. Enhancement factors of more than five orders of magnitude can be achieved. Use of photonic crystals makes it possible to reduce the effective observation volume, thereby opening new opportunities such as the study of single-molecule dynamics, even in high concentration solutions. We have demonstrated sharp enhancement of the fluorescence of single molecules immobilized on the surface of a GaN photonic crysta,l when the molecules are excited via the resonant second harmonic generation process.

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Dominique Coquillat, Jérémie Torres, Marine Le Vassor d'Yerville, David Cassagne, Frédéric Teppe, Nina Dyakonova, Wojciech Knap, Richard De La Rue, Sophie Bouchoule, Emmanuel Margeat, and Catherine Royer "Second harmonic generation in GaN-based photonic crystals for single molecule investigations", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621R (27 February 2012); https://doi.org/10.1117/12.905593

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