Paper
1 March 2012 Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers
A. Redondo-Cubero, M. Brandt, F. Henneberger, E. Alves, K. Lorenz
Author Affiliations +
Proceedings Volume 8263, Oxide-based Materials and Devices III; 82630U (2012) https://doi.org/10.1117/12.908496
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
In this paper we show the application of Rutherford backscattering spectrometry and ion channeling (RBS/C) for the detection of compositional and strain gradients in CdZnO grown almost pseudomorphically on MgZnO. The asymmetric features revealed in X-ray diffraction studies were explained by the compositional gradient found in the first 100 nm close to the interface. Calculations of the effect of such a gradient on the strain state of the layer were developed and contrasted with RBS/C angular scans. Additionally, the substitutional behavior of Cd (and Mg) in Zn-sites was demonstrated.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Redondo-Cubero, M. Brandt, F. Henneberger, E. Alves, and K. Lorenz "Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers", Proc. SPIE 8263, Oxide-based Materials and Devices III, 82630U (1 March 2012); https://doi.org/10.1117/12.908496
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KEYWORDS
Cadmium

Zinc

Interfaces

Magnesium

Crystals

Backscatter

Ions

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