Investigation of the photon emission from p-n junction of silicon solar cells studied by electro-optical methods

Roberrt Macku; Pavel Koktavy; Pavel Tomanek

doi:10.1117/12.911322

11 October 2011 Investigation of the photon emission from p-n junction of silicon solar cells studied by electro-optical methods

Roberrt Macku, Pavel Koktavy, Pavel Tomanek

Author Affiliations +

Proceedings Volume 8306, Photonics, Devices, and Systems V; 83061I (2011) https://doi.org/10.1117/12.911322
Event: Photonics Prague 2011, 2011, Prague, Czech Republic

Abstract

We investigate localized defects of silicon solar cells. These imperfections represent real problem because of solar cell long-term degradation and decreasing conversion efficiency. To solve this issue, this paper does systematic research about optical investigation of local defect spots and correlation with rectangular microplasma fluctuation. Sensitive CCD camera has been used for mapping of surface photon emission. The operation point of the samples has been set to reverse bias mode and the different electric field intensity was applied. It turns out, that some solar cells exhibit an imperfection in the bulk and close to the edges. Nevertheless, we confine ourselves to bulk defects of potential barrier. We managed to get interesting information using combination of optical investigations and electrical noise measurement in the time and spectral domain. It will be revealed that a direct correlation between noise and photon emission exists and the results related to several defect spots are presented in this paper in detail.

Citation Download Citation

Roberrt Macku, Pavel Koktavy, and Pavel Tomanek "Investigation of the photon emission from p-n junction of silicon solar cells studied by electro-optical methods", Proc. SPIE 8306, Photonics, Devices, and Systems V, 83061I (11 October 2011); https://doi.org/10.1117/12.911322

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