Defect distribution study at through silicon via (TSV) bottom by scanning white-light interference microscopy

Jeongho Ahn; Jaeyoung Park; Dongchul Ihm; Byoungho Lee; Soobok Chin; Ho-Kyu Kang; Jiyoung Noh; Peter Ko; Timothy A. Johnson; Namki Suk

doi:10.1117/12.917797

3 April 2012 Defect distribution study at through silicon via (TSV) bottom by scanning white-light interference microscopy

Jeongho Ahn, Jaeyoung Park, Dongchul Ihm, Byoungho Lee, Soobok Chin, Ho-Kyu Kang, Jiyoung Noh, Peter Ko, Timothy A. Johnson, Namki Suk

Author Affiliations +

Proceedings Volume 8324, Metrology, Inspection, and Process Control for Microlithography XXVI; 83241U (2012) https://doi.org/10.1117/12.917797
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Distributions of via Depth and bottom CD for TSV wafer have been studied by scanning interference microscopy (Unifire 7900, Nanometrics Inc.). We plotted whole wafer maps for each via depth and bottom CD and found useful relationship between them (i.e. via depth is in inverse proportion to bottom CD in general). Average values of via depth and bottom CD are ~60um and ~4um and their standard deviation values are 1.28% and 5.14% respectively. We also demonstrated kinds of defects at via top (or bottom) which can cause disturbance of total via count during 3D inspection. Our results can be a good introduction to scanning interference tool as a monitoring tool for TSV high volume manufacturing.

Citation Download Citation

Jeongho Ahn, Jaeyoung Park, Dongchul Ihm, Byoungho Lee, Soobok Chin, Ho-Kyu Kang, Jiyoung Noh, Peter Ko, Timothy A. Johnson, and Namki Suk "Defect distribution study at through silicon via (TSV) bottom by scanning white-light interference microscopy", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83241U (3 April 2012); https://doi.org/10.1117/12.917797

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